High‐Performance of Liquid‐Gated Silicon Nanowire FETs Covered with Ultrathin Layers of Diamond‐Like Tetrahedral Amorphous Carbon

Label-free, low-noise, and ultrahigh-sensitive biosensors based on liquid-gated (LG) silicon (Si) nanowire (NW) field-effect transistors (FETs) have recently emerged as promising diagnostic tools that can be used for the purposes of healthcare monitoring point-of-care applications. However, sensing capabilities performance such devices still critically depend several factors, including quality intrinsic properties materials used. In particular, important role determining device is assigned to gate insulator layer, which acts a surface in NW-based requires optimization. this study, we investigate advanced multilayer structures: Si NW/SiO2/diamond-like carbon FETs. The high diamond-like layer obtained by low-temperature physical vapor deposition (PVD) confirmed X-Ray photoelectron spectroscopy (XPS) Raman studies. Current–voltage noise reflect high-quality transport these structures. This article protected copyright. All rights reserved.